2sc458(k) silicon npn epitaxial ade-208-1045 (z) 1st. edition mar. 2001 application low frequency amplifier medium speed switching outline 1. emitter 2. collector 3. base to-92 (1) 3 2 1
2sc458 (k) 2 absolute maximum ratings (ta = 25?) item symbol ratings unit collector to base voltage v cbo 30 v collector to emitter voltage v ceo 30 v emitter to base voltage v ebo 5v collector current i c 100 ma emitter current i e ?00 ma collector power dissipation p c 200 mw junction temperature tj 150 c storage temperature tstg ?5 to +150 c electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector to base breakdown voltage v (br)cbo 30 v i c = 10 m a, i e = 0 collector to emitter breakdown voltage v (br)ceo 30 v i c = 1 ma, r be = emitter to base breakdown voltage v (br)ebo 5 vi e = 10 m a, i c = 0 collector cutoff current i cbo 0.5 m av cb = 18 v, i e = 0 emitter cutoff current i ebo 1.0 m av eb = 4 v, i c = 0 dc current transfer ratio h fe * 1 100 500 v ce = 1 v, i c = 10 ma collector to emitter saturation voltage v ce(sat) 0.4 v i c = 10 ma, i b = 1 ma base to emitter voltage v be(sat) 1.0 v i c = 10 ma, i b = 1 ma gain bandwidth product f t 100 mhz v ce = 10 v, i c = 10 ma collector output capacitance cob 4 pf v cb = 10 v, i e = 0, f = 1 mhz turn on time t on 80 ns i c = 10 i b1 = ?0 i b2 = 10 ma, v cc = 10 v turn off time t off 300 ns storage time t stg 260 ns i c = i b1 = ? b2 = 20 ma, v cc = 5 v note: 1. the 2sc458 (k) is grouped by h fe as follows. bcd 100 to 200 160 to 320 250 to 500
2sc458 (k) 3 small signal h parameters item symbol typ unit test conditions input impedance h ie 16.5 k w v ce = 5 v, i c = 0.1 ma, f = 270 hz voltage feedback ratio h re 70 10 ? current transfer ratio h fe 130 output admittance h oe 11 m s + + switching time test circuit t on , t off test circuit d.u.t crt 50 ? v 6 k 6 k 1 k 10 v 50 m 50 m 0.005 m 0.005 m unit p.g. tr, tf 20 ns pw 2 m s r: w c:f < = > = + + switching time test circuit t stg test circuit d.u.t crt 200 7 v 100 0.5 m 220 240 5 v 50 m 50 m 0.002 m 0.002 m unit p.g. tr 10 ns pw 1 m s r: w c:f < = > = response waveform 13 v 0 90% 10% t on t off input output i c i b1 i b2 v cc v bb v in 10 ma 1 ma ? ma 10 v ? v 13 v response waveform ? v 0 input output 10% 10% t stg i c i b1 i b2 v cc v bb v in 20 ma 20 ma ?0 ma 5 v 7 v ? v
2sc458 (k) 4 maximum collector dissipation curve 250 200 150 100 50 0 50 150 100 ambient tmperature ta ( c) collector power dissipation p c (mw) collector cutoff current vs. collector to base voltage 100 125 100 75 50 ta = 25 c 30 10 3 1.0 0.3 0.1 0.03 0 102030 515 collector to base voltage v cb (v) collector cutoff current i cbo (na) 25 typical output characteristics (1) i b = 0 100 80 60 40 20 0 0.4 1.2 2.0 0.8 collector to emitter voltage v ce (v) collector current i c (ma) 1.6 0.1 ma 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 typical output characteristics (2) 14 12 10 8 6 4 1 m a 2 i b = 0 2.0 1.8 1.2 0.8 0.4 0 20 60 100 40 80 collector to emitter voltage v ce (v) collector current i c (ma)
2sc458 (k) 5 collector to emitter saturation voltage vs. base current 1.0 0.8 0.6 0.4 0.2 0 0.02 0.1 0.5 2 10 0.05 0.2 base current i b (ma) collector to emitter saturation voltage v ce(sat) (v) 1.0 20 5 i c = 5 ma 10 20 50 100 dc current transfer ratio vs. collector current collector current i c (ma) dc current transfer ratio h fe v ce = 1 v 240 200 160 120 80 40 0 0.5 5 20 100 21050 1.0 ta = 100 c 75 50 25 0 ?5 ?0 base to emitter saturation voltage vs. collector current collector current i c (ma) base to emitter saturation voltage v be (sat) (v) 1.2 1.0 0.8 0.6 0.4 0.2 0 100 110 52050 2 i c = 10 i b ta = 75 c ?5 25 collector to emitter saturation voltage vs. collector current i c = 10 i b ta = 25 c ?0 collector current i c (ma) collector to emitter saturation voltage v ce(sat) (v) 0.28 0.24 0.20 0.16 0.12 0.08 0.04 0 1 5 20 100 10 50 2
2sc458 (k) 6 gain bandwidth product vs. collector current collector current i c (ma) gain bandwidth product f t (mhz) v ce = 10 v 500 400 300 200 100 0 0.5 2 10 1.0 5 20 input and output capacitance vs. voltage collector to base voltage v cb (v) emitter to base voltage v eb (v) collector output capacitance c ob (pf) emitter input capacitance c ib (pf) 8 7 6 5 4 3 2 0.3 1.0 10 330 f = 1 mhz c ib (i c = 0) c ob (i e = 0) switching time vs. collector current collector current i c (ma) switching time t ( m s) v cc = 10.3 v i c = 10 i b1 = ?0 i b2 1.0 0.5 0.2 0.1 0.05 0.02 0.01 1 5 20 100 21050 t off t stg t on t d h parameter vs. collector current collector current (ma) percentage of relative to i c = 0.1 ma v ce = 6 v f = 270 hz 100 50 20 10 5 2 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.5 0.2 5 2 1.0 10 0.1 0.05 0.02 h ie h ie h fe h re h ie h oe h re h fe
2sc458 (k) 7 h parameter vs. collector to emitter voltage collector to emitter voltage v ce (v) percentage of relative to v ce = 5 v i c = 0.1ma f = 270 hz h re h re h oe h oe h fe h fe h ie h ie 1.8 1.6 1.4 1.2 1.0 0.8 0.5 5 20 210 1.0
2sc458 (k) 8 package dimensions 0.60 max 0.55max 4.8 0.4 3.8 0.4 5.0 0.2 0.7 2.3 max 12.7 min 0.5max 1.27 2.54 hitachi code jedec eiaj mass (reference value) to-92 (1) conforms conforms 0.25 g as of january, 2001 unit: mm
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